Simultaneous Switching of Multiple GaN Transistors in a High-Speed Switch

被引:0
|
作者
Frolov, Daniil [1 ]
Saewert, Greg [1 ]
机构
[1] Fermilab Natl Accelerator Lab, POB 500, Batavia, IL 60510 USA
关键词
PIP-II; GaN; fast switch; beam kicker; gate synchronization;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A broadband travelling wave kicker operating with 80 MHz repetition rates is required for the new PIP-II accelerator at Fermilab. We present a technique to drive simultaneously four series-connected enhancement mode GaN-on-silicon power transistors by means of microwave photonics techniques. These four transistors are arranged into a high voltage and high repetition rate switch. Using multiple transistors in series is required to share switching losses. Using a photonic signal distribution system is required to achieve precise synchronization between transistors. We demonstrate 600 V arbitrary pulse generation into a 200 Ohm load with 2 ns rise/fall time. The arbitrary pulse widths can be adjusted from 4 ns to essentially DC.
引用
收藏
页码:407 / 410
页数:4
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