Investigation of dopant profiles in nanosized materials by scanning transmission electron microscopy

被引：0
|
作者：
Merli, PG
Morandi, V
Migliori, A
Baratto, C
Comini, E
Faglia, G
Ferroni, M
Ponzoni, A
Poli, N
Sberveglieri, G
机构：
[1] CNR, IMM Sez Bologna, Area Ric Bologna, I-40126 Bologna, Italy
[2] INFM, Sensor Lab, I-25133 Brescia, Italy
[3] Univ Brescia, Dipartimento Chim & Fis Ingn & Mat, I-25133 Brescia, Italy
来源：
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA C-COLLOQUIA ON PHYSICS | 2004年 / 27卷 / 05期
关键词：
D O I：
10.1393/ncc/i2005-10014-8
中图分类号：
学科分类号：
摘要：
Scanning electron microscopy is capable to provide chemical information on specimens interesting for the field of materials science and nanotechnology. The spatial resolution and the chemical information provided by incoherent imaging and detection of transmitted, forward-scattered electrons can reveal useful information about the specimen composition and microstructure. This paper discusses the capability and potential of low-voltage Scanning Transmission Electron Microscopy (STEM) for the characterization of multilayered structures and dopant profiles in crystalline materials.
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收藏
页码：467 / 472
页数：6
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