Individually Switchable InGaN/GaN Nano-LED Arrays as Highly Resolved Illumination Engines

被引:7
|
作者
Kluczyk-Korch, Katarzyna [1 ,6 ]
Moreno, Sergio [2 ]
Canals, Joan [2 ]
Dieguez, Angel [2 ]
Gulink, Jan [3 ,4 ]
Hartmann, Jana [3 ,4 ]
Waag, Andreas [3 ,4 ]
Di Carlo, Aldo [1 ,5 ]
Maur, Matthias Auf Der [1 ]
机构
[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy
[2] Univ Barcelona, Dept Elect & Biomed Engn, Barcelona 08028, Spain
[3] Univ Technol Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany
[4] Lab Emerging Nanometrol LENA, D-38106 Braunschweig, Germany
[5] ISM CNR, Via Fosso Cavaliere 100, I-00133 Rome, Italy
[6] Univ Warsaw, Dept Phys, PL-02093 Warsaw, Poland
基金
欧盟地平线“2020”;
关键词
GaN LEDs; nano-LED arrays; structured illumination; spatially resolved illumination; DISPLAY;
D O I
10.3390/electronics10151829
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
GaN-based light emitting diodes (LEDs) have been shown to effectively operate down to nanoscale dimensions, which allows further downscaling the chip-based LED display technology from micro- to nanoscale. This brings up the question of what resolution limit of the illumination pattern can be obtained. We show two different approaches to achieve individually switchable nano-LED arrays. We evaluated both designs in terms of near-field spot size and optical crosstalk between neighboring pixels by using finite difference time domain (FDTD) simulations. The numerical results were compared with the performance data from a fabricated nano-LED array. The outcome underlines the influence of geometry of the LED array and materials used in contact lines on the final illumination spot size and shape.
引用
收藏
页数:13
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