Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN

被引：8
|
作者：
Jung, Younghun [1 ]
Mastro, Michael A. [2 ]
Hite, Jennifer [2 ]
Eddy, Charles R., Jr. [2 ]
Kim, Jihyun [1 ]
机构：
[1] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea
[2] USN, Res Lab, Power Elect Mat Sect, Washington, DC 20375 USA
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 20期
关键词：
Non-polar GaN; Schottky barrier height; Annealing; LIGHT-EMITTING-DIODES; P-TYPE GAN; ALGAN/GAN;
D O I：
10.1016/j.tsf.2010.05.113
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 degrees C. A further increase in the anneal temperature above 500 degrees C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 degrees C. The degradation at 600 degrees C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 degrees C and 165 degrees C revealed that both the ideality factor and SBH were stable up to 165 degrees C with increasing in-situ measurement temperature. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：5810 / 5812
页数：3
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