Analysis of near-IR photon emissions from 50-nm n- and p-channel Si MOSFETs

被引：14
|
作者：
de Luna, NC [1 ]
Bailon, MF
Tarun, AB
机构：
[1] Intel Corp, Rio Rancho, NM 87124 USA
[2] Intel Technol Philippines, Cavile 97124, Philippines
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 06期
关键词：
emission; silicon; spectral analysis; transistors;
D O I：
10.1109/TED.2005.848112
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photon emission from n- and p-channel transistors having 50-nm effective lengths and operating in saturation were obtained by using a photon-emission microscope equipped with an HgCdTe detector. Emission spectra were acquired in the near-IR or low photon energy range (0.85-1.1 eV) and fitted to three models: Brehmsstrahlung, direct hot-hole transitions, and direct hot electron transitions. The results show that emissions in both n-channel and p-channel devices have similar Gaussian profiles, implying that the same emission mechanism is occuring in both devices. Emissions from both devices are largely due to photons generated from direct hot electron transitions within the conduction band. The mechanism is modeled as a Gaussian intensity distribution modulated by Si absorption effects since emissions were acquired through the backside.
引用
收藏
页码：1211 / 1214
页数：4
相关论文
共 50 条
  • [31] Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N2 Annealing
    Tachiki, Keita
    Kimoto, Tsunenobu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (02) : 638 - 644
  • [32] Doped vs. undoped Si1-x-yGexCy layers in sub-100 nm vertical p-channel MOSFETs
    Yang, M
    Sturm, JC
    THIN SOLID FILMS, 2000, 369 (1-2) : 366 - 370
  • [33] Fabrication of n- and p-channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing
    Holzmann, M
    Baumgartner, P
    Engel, C
    Nutzel, JF
    Abstreiter, G
    Schaffler, F
    APPLIED PHYSICS LETTERS, 1996, 68 (21) : 3025 - 3027
  • [34] IIA-7 MONTE-CARLO SIMULATIONS OF P-CHANNEL AND N-CHANNEL DUAL-GATE SI MOSFETS AT THE LIMITS OF SCALING
    FRANK, DJ
    LAUX, SE
    FISCHETTI, MV
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2103 - 2103
  • [35] Tunable Visible and Near-IR Emission from Sub-10 nm Etched Single-Crystal Si Nanopillars
    Walavalkar, Sameer S.
    Hofmann, Carrie E.
    Homyk, Andrew P.
    Henry, M. David
    Atwater, Harry A.
    Scherer, Axel
    NANO LETTERS, 2010, 10 (11) : 4423 - 4428
  • [36] Comparison of hot-carrier effects in deep submicron N- and P-channel partially- and fully-depleted Unibond and SIMOX MOSFETs
    Renn, SH
    Raynaud, C
    Pelloie, JL
    Balestra, F
    1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, : 203 - 208
  • [37] Self-aligned n- and p-channel GaAs MOSFETs on undoped and p-type substrates using HfO2 and silicon interface passivation layer
    Ok, Injo
    Kim, H.
    Zhang, M.
    Lee, T.
    Zhu, F.
    Yu, L.
    Koveshnikov, S.
    Tsai, W.
    Tokranov, V.
    Yakimov, M.
    Oktyabrsky, S.
    Lee, Jack C.
    2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 579 - +
  • [38] IMPROVED DEVICE PERFORMANCE AND RELIABILITY OF N-CHANNEL AND P-CHANNEL MOSFETS WITH ULTRATHIN GATE OXIDES PREPARED BY CONVENTIONAL FURNACE OXIDATION OF SI IN PURE N2O AMBIENT
    LO, GQ
    TING, W
    AHN, J
    KWONG, DL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (12) : 2710 - 2711
  • [39] Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs
    Rodrigues, M.
    Martino, J. A.
    Mercha, A.
    Collaert, N.
    Simoen, E.
    Claeys, C.
    SOLID-STATE ELECTRONICS, 2010, 54 (12) : 1592 - 1597
  • [40] Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part I: Theory and methodology
    Boudier, D.
    Cretu, B.
    Simoen, E.
    Carin, R.
    Veloso, A.
    Collaert, N.
    Thean, A.
    SOLID-STATE ELECTRONICS, 2017, 128 : 102 - 108
12345