Er-doped Ge-S-Ga glasses: photoluminescence and thermal properties

被引：6
|
作者：
Ivanova, Z. G.
Cernoskova, E.
Cernosek, Z.
机构：
[1] Bulgarian Acad Sci, Inst Solid State Phys, Sofia 1784, Bulgaria
[2] Acad Sci Czech Republic, Inst Mol Chem, Joint Lab Solid State Chem, Pardubice 53210, Czech Republic
[3] Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Pardubice 53210, Czech Republic
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2007年 / 68卷 / 5-6期
关键词：
glasses; luminescence; optical properties; thermodynamical properties;
D O I：
10.1016/j.jpcs.2007.01.041
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Chalcogenide Er-doped (GeS2)(75)(Ga2S3)(25) glasses have been characterized by some photoluminescence (PL) and thermal parameters with a view to possible optoelectronic applications. The emission spectra at similar to 1540nm under excitation with 1064nm light of heavily doped samples (1.05, 1.22 and 1.39at% Er) have been studied. The temperatures of glass transition and crystallization, as well as the kinetics of crystallization for the un-doped and most doped samples, have been determined by differential thermal analysis (DTA). (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1260 / 1262
页数：3
相关论文
共 50 条
  • [21] Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters
    Guzman, J.
    Shin, S. J.
    Liao, C. Y.
    Yuan, C. W.
    Stone, P. R.
    Dubon, O. D.
    Yu, K. M.
    Beeman, J. W.
    Watanabe, M.
    Ager, J. W., III
    Chrzan, D. C.
    Haller, E. E.
    APPLIED PHYSICS LETTERS, 2009, 95 (20)
  • [22] Absorption and photoluminescence properties of Er-doped and Er/Yb codoped soda-silicate laser glasses
    Li, SF
    Zhang, QY
    Lee, YP
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) : 4746 - 4750
  • [23] Absorption and photoluminescence properties of Er-doped and Er/Yb codoped soda-silicate laser glasses
    Li, S.F., 1600, American Institute of Physics Inc. (96):
  • [24] Low-temperature Er3+ emission in Ge-S-Ga glasses excited by host absorption
    Ivanova, Z. G.
    Aneva, Z.
    Ganesan, R.
    Tonchev, D.
    Gopal, E. S. R.
    Rao, K. S. R. K.
    Allen, T. W.
    DeCorby, R. G.
    Kasap, S. O.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2007, 353 (13-15) : 1418 - 1421
  • [25] Influence of Ga on the optical and thermal properties of Er2S3 doped stoichiometric and nonstoichiometric Ge-Ga-Se glasses
    Munzar, M
    Koughia, K
    Tonchev, D
    Kasap, SO
    Sakai, T
    Maeda, K
    Ikari, T
    Haugen, C
    Decorby, R
    McMullin, JN
    PHYSICS AND CHEMISTRY OF GLASSES, 2005, 46 (02): : 215 - 219
  • [26] Photoluminescence lifetime spectrum in erbium doped Ge-Ga-S glasses
    Koughia, K.
    Saitou, D.
    Aoki, T.
    Munzar, M.
    Kasap, S. O.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (23-25) : 2420 - 2424
  • [27] Absorption and photoluminescence of ternary nanostructured Ge-S-Ga(In)glassy semiconductor systems
    A. A. Babaev
    V. Kh. Kudoyarova
    Semiconductors, 2013, 47 : 908 - 910
  • [28] 1.54 μm photoluminescence of Er-doped Ge Ox thin films
    Ardyanian, M.
    Rinnert, H.
    Vergnat, M.
    Journal of Applied Physics, 2007, 102 (10):
  • [29] Effect of annealing on the photoluminescence in sputtered films of Er-doped chalcogenide glasses
    Vigreux-Bercovici, C.
    Pradel, A.
    Fuchs, A.
    Fick, J.
    PHYSICS AND CHEMISTRY OF GLASSES-EUROPEAN JOURNAL OF GLASS SCIENCE AND TECHNOLOGY PART B, 2006, 47 (02): : 162 - 166
  • [30] Absorption and photoluminescence of ternary nanostructured Ge-S-Ga(In)glassy semiconductor systems
    Babaev, A. A.
    Kudoyarova, V. Kh
    SEMICONDUCTORS, 2013, 47 (07) : 908 - 910
12345