Modulation of the Schottky Barrier Height for Advanced Contact Schemes

被引：0

作者：

Menghini, Mariela A. ^{[1
]}

Homm, Pia ^{[1
]}

Su, Chen-Yi ^{[1
]}

Kittl, Jorge A. ^{[2
]}

Tomita, Ryuji ^{[3
]}

Hegde, Ganesh ^{[2
]}

Lee, Joon-Gon ^{[3
]}

Hyun, Sangjin ^{[3
]}

Bowen, Chris ^{[2
]}

Rodder, Mark. S. ^{[2
]}

Afanas'ev, Valeri ^{[1
]}

Locquet, Jean-Pierre ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Dept Phys & Astron, Leuven, Belgium

[2] Samsung Semicond Inc, Adv Log Lab, Austin, TX USA

[3] Samsung, Semicond Res & Dev, Dongtan, South Korea

来源：

2015 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND 2015 IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE (IITC/MAM) | 2015年

关键词：

SULFUR SEGREGATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Contact schemes for scaled Si, SiGe and Ge channel MOSFETs devices are discussed, consistent with an approach based on SiGe alloys with low Schottky Barrier Height (SBH) for pMOS and Si contacts for nMOS, making reduction of the SBH to nSi critical. Methods for SBH reduction, and their underlying mechanisms, are studied. Accurate cryogenic CV measurements were used to extract SBH. We show that chalcogenide segregation can be effective in lowering the SBH by a dipole effect, while MIS contacts have a partial un-pinning effect. SBH=0.00 +/- 0.01 eV was achieved.

引用

页码：39 / 41

页数：3

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