Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy

被引：39

作者：

Skierbiszewski, C ^{[1
]}

Wasilewski, Z

Siekacz, M

Feduniewicz, A

Pastuszka, B

Grzegory, I

Leszczynski, M

Porowski, S

机构：

[1] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

[2] CNR, Inst Microstruct Sci, Ottawa, ON, Canada

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 02期

关键词：

D O I：

10.1002/pssa.200303961

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Influence of growth conditions in plasma assisted molecular beam epitaxy on quality of GaN layers and GaN/AlGaN heterojunctions is studied. The growth diagram for step-flow growth mode and different nitrogen flux is presented. The low defect density of bulk GaN substrates together with very low impurity background concentrations resulted in high electron mobility for GaN/AlGaN heterojunctions: 109,000 cm(2) Ns at 1.5 K, and 2500 cm(2)/Vs at 295 K. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：320 / 323

页数：4

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