Thin-film field-effect transistors of copper phthalocyanine on a rubbed polyethersulfone

被引：55

作者：

Kim, Hyun Gi ^{[2
,3
]}

Jang, Jung Soo ^{[2
,3
]}

Hur, Sung-Taek ^{[1
,3
]}

Choi, Suk-Won ^{[1
,3
]}

Kim, Sung Soo ^{[2
,3
]}

Tada, Hiroyuki ^{[4
]}

Takezoe, Hideo ^{[4
]}

Ishikawa, Ken ^{[4
]}

机构：

[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea

[2] Kyung Hee Univ, Dept Chem Engn, Yongin 446701, Gyeonggi Do, South Korea

[3] Kyung Hee Univ, Reg Innovat Ctr Components & Mat Informat Display, Yongin 446701, Gyeonggi Do, South Korea

[4] Tokyo Inst Technol, Dept Organ & Polymer Mat, Meguro Ku, Tokyo 1528552, Japan

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 06期

关键词：

Field-effect transistor; Copper phthalocyanine; Polyethersulfone; Rubbing; Atomic force microscopy; Current-voltage properties; ALIGNMENT; ORIENTATION; LAYERS;

D O I：

10.1016/j.tsf.2010.09.044

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated copper phthalocyanine (CuPc) thin-film field-effect transistors (FETs) on a rubbed flexible polyethersulfone (PES) substrate. Rubbing the PES film induced a unidirectional orientation of CuPc crystallites, which were oriented perpendicular to the rubbing direction. Favorable conditions for fabricating a CuPc FET were determined after fabricating CuPc FETs of two different types and evaluating their output performance. Well-aligned CuPc crystallites along the direction connecting source and drain electrodes can play an important role in improving the output performance of the fabricated FETs. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2011 / 2014

页数：4

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