High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

被引：17
|
作者：
Chao, Yu-Chiang [3 ]
Niu, Mu-Chun [3 ]
Zan, Hsiao-Wen [1 ,2 ]
Meng, Hsin-Fei [3 ]
Ku, Ming-Che [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan
来源：
ORGANIC ELECTRONICS | 2011年 / 12卷 / 01期
关键词：
Vertical transistor; Space-charge-limited current; HIGH-PERFORMANCE; POLY(3-HEXYLTHIOPHENE); MATRIX; CELLS;
D O I：
10.1016/j.orgel.2010.09.023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10 (5) cm(2)/Vs to 10 (3) cm(2)/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm(2) while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码：78 / 82
页数：5
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