High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

被引:17
|
作者
Chao, Yu-Chiang [3 ]
Niu, Mu-Chun [3 ]
Zan, Hsiao-Wen [1 ,2 ]
Meng, Hsin-Fei [3 ]
Ku, Ming-Che [1 ,2 ]
机构
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan
关键词
Vertical transistor; Space-charge-limited current; HIGH-PERFORMANCE; POLY(3-HEXYLTHIOPHENE); MATRIX; CELLS;
D O I
10.1016/j.orgel.2010.09.023
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10 (5) cm(2)/Vs to 10 (3) cm(2)/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm(2) while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码:78 / 82
页数:5
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