Reverse current characteristics in ITO/c-Si anisotype heterojunctions

被引：0
|
作者：
Pelino, A
Conte, G
机构：
[1] Univ Rome, INFM, I-00146 Rome, Italy
[2] Univ Rome, Dept Elect Engn, I-00146 Rome, Italy
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 01期
关键词：
D O I：
10.1049/el:20010023
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High dark reverse currents in (n(+))ITO/(p)c-Si junctions strongly affect the performance of high-speed, UV-enhanced photodiodes. The transport mechanism involved and the role of interface defects are investigated. Deleterious effects can be minimised by the introduction of a thin a-Si:H layer, mainly due to the effusion and passivating action of the trapped hydrogen.
引用
收藏
页码：58 / 59
页数：2
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