The modeling front contact metallization grid pattern for multi crystalline silicon solar cell

被引:0
|
作者
Jalali, R. [1 ,2 ,3 ]
Faizabadi, E. [1 ]
Behafarid, F. [2 ]
机构
[1] KN Toosi Univ Technol, Fac Sci, Dept Phys, Tehran, Iran
[2] Univ Tehran, Dept Comp & Elect, Tehran 14174, Iran
[3] Azad Univ, Dept Phys, Tehran, Iran
关键词
contact metallization; grid pattern; parasitic losses; silicon solar cell;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The achievement of high efficiency in solar cells is depended upon minimizing parasitic losses. Some fraction of the power produced by the cell is necessarily lost by series resistance associated with the grid and by Shadowing of them. There are several approaches to reduction these losses, such as choosing a more efficient pattern, optimizing line spacing, etc. The problem is further complicated by the need for dense coverage of the cell area with the grid pattern to reduce the power loss caused by the lateral voltage drop in the active layer, and they need to avoid grid patterns that are too fine and too resistive. In this paper we investigate a special design that minimize the power loss for 10cm x 10cm multi crystalline silicon solar cell based on the exact calculating of all kind of power losses including shadowing, contact, lateral and metallization for fingers and power losses due to metallization and shadowing for busbars. We achieved a method for exact calculation of metallization power loss for the current which increased at every node and depends on the number of wires which are parallel to the busbar. We find that the efficiency of this cell is below that of a cell with standard pattern and it is low cost manufacture too.
引用
收藏
页码:445 / +
页数:2
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