Raman spectroscopy of semiconductor nanostructures in optically confined microcavities

被引:0
|
作者
Trigo, M
Fainstein, A [1 ]
Jusserand, B
Thierry-Mieg, V
机构
[1] Comis Nacl Energia Atom, Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[2] CNRS, FTR&D, F-92225 Bagneux, France
[3] CNRS, Microstruct & Microelect Lab, F-92225 Bagneux, France
来源
PHYSICA E | 2001年 / 11卷 / 2-3期
关键词
microcavities; semiconductor nanostructures; Raman scattering; phonons;
D O I
10.1016/S1386-9477(01)00204-1
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We use a novel double microcavity for double optical resonant Raman amplification. The observed four orders of magnitude Raman enhancement is exploited to study finite size effects on the phonon spectra of GaAs/AlAs MQWs. The design allows almost backscattering geometries, thus providing easy access to the excitations in-plane dispersion. The k(parallel to) dispersion of the GaAs-like optical phonons has been mapped out, showing the existence of a new type of "standing optical vibrations" in the Raman spectra. The N = 1 order standing wave displays a giant k(parallel to) dispersion and successively anticrosses with the higher order m = 5,7,9 and 11 confined phonons. The acoustic phonon spectra in the folded phonon region displays a complex series of peaks reflecting coupling effects between the two embedded MQWs. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:205 / 208
页数:4
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