Fabrication and evaluation of niobium doped lead titanate thin films

被引：0
|
作者：
Ibrahim, RC
Sakai, T
Nishida, T
Horiuchi, T
Shiosaki, T
Matsushige, K
机构：
来源：
ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Several characteristics of niobium doped lead titanate thin films were evaluated, The concentrations of niobium in the films were varied to a maximum of 4 mol %. Resistivity and dielectric loss characteristics of lead titanate were considerably improved with doping, A doping concentration of 2 mol % Nh presented a high tetragonality ratio c/a and low dielectric constant.
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页码：157 / 160
页数：4
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