InAs/GaSb/AlSb resonant tunneling spin device concepts

被引：1
|
作者：
Ting, DZY
Cartoixà, X
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[2] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 20卷 / 3-4期
关键词：
spin filter; spin pump; resonant tunneling; bulk inversion asymmetry; structural inversion asymmetry; Rashba effect;
D O I：
10.1016/j.physe.2003.08.032
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 Angstrom semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：350 / 354
页数：5
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