Numerical simulations of surface plasmon resonances in metal-chalcogenide waveguides

被引：4
|
作者：
Stafe, Mihai [1 ]
Vasile, Georgiana C. [1 ]
Popescu, Aurelian A. [2 ]
Savastru, Dan [2 ]
Baschir, Laurentiu [2 ]
Mihailescu, Mona [1 ]
Negutu, Constantin [1 ]
Puscas, Niculae N. [1 ]
机构：
[1] Univ Politehn Bucuresti, Dept Phys, Bucharest 060042, Romania
[2] Natl Inst R&D Optoelect, INOE 2000, Magurele 77125, Ilfov, Romania
来源：
ADVANCED TOPICS IN OPTOELECTRONICS, MICROELECTRONICS, AND NANOTECHNOLOGIES VII | 2015年 / 9258卷
关键词：
photonics; plasmonics; chalcogenide amorphous materials; attenuation coefficient; field distribution; LAYER;
D O I：
10.1117/12.2070182
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present several numerical simulations of the surface plasmon resonance for Kretschmann type configuration in a metal-chalcogenide waveguide. We assume that the chalcogenide (GaLaS) waveguide layer have finite thickness, whereas the gold film layer and the air cover layer are semi-infinite layers (from an optical point of view). We determined the thickness of the chalcogenide film for which plasmonic resonant coupling of the incident radiation to the waveguide occurs. We calculated the propagation constant for the TE- and TM-modes (both for visible and IR domain), the attenuation coefficient and the electromagnetic field distribution within the waveguide. The obtained results provide the conditions for design an optical memory device 2D based on light-light interaction in plasmonic configuration.
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收藏
页数：7
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