The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET

被引：5

作者：

Tang, Lei ^{[1
]}

Jiang, Huaping ^{[1
]}

Mao, Hua ^{[1
]}

Wu, Zebing ^{[1
]}

Zhong, Xiaohan ^{[1
]}

Qi, Xiaowei ^{[1
]}

Ran, Li ^{[1
,2
]}

机构：

[1] Chongqing Univ, State Key Lab Power Transmission Equipment & Syst, Chongqing 400044, Peoples R China

[2] Univ Warwick, Sch Engn, Coventry, W Midlands, England

来源：

2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021) | 2021年

关键词：

Body diode; SiC MOSFET; body effect; third quadrant characteristics; dynamic threshold voltage drift;

D O I：

10.1109/WIPDAASIA51810.2021.9656049

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The conduction characteristics of the third quadrant of SiC MOSFET include the current distribution of the body diode and the MOS channel, which are sensitive to many factors. In this paper, the influence of dynamic threshold voltage drift on third quadrant characteristics of SiC MOSFET is studied. By combining the equivalent potential model, TCAD simulation, and experiment, it is revealed that once the threshold voltage drifts under dynamic gate voltage stress, the static and dynamic characteristics of the third quadrant of SiC MOSFET will change. Furthermore, the current sharing of parallel devices is also affected by dynamic threshold voltage drift. These results provide an effective guide for the third quadrant application of SiC MOSFET.

引用

页码：483 / 487

页数：5

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