The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET

被引：5
|
作者：
Tang, Lei [1 ]
Jiang, Huaping [1 ]
Mao, Hua [1 ]
Wu, Zebing [1 ]
Zhong, Xiaohan [1 ]
Qi, Xiaowei [1 ]
Ran, Li [1 ,2 ]
机构：
[1] Chongqing Univ, State Key Lab Power Transmission Equipment & Syst, Chongqing 400044, Peoples R China
[2] Univ Warwick, Sch Engn, Coventry, W Midlands, England
来源：
2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021) | 2021年
关键词：
Body diode; SiC MOSFET; body effect; third quadrant characteristics; dynamic threshold voltage drift;
D O I：
10.1109/WIPDAASIA51810.2021.9656049
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The conduction characteristics of the third quadrant of SiC MOSFET include the current distribution of the body diode and the MOS channel, which are sensitive to many factors. In this paper, the influence of dynamic threshold voltage drift on third quadrant characteristics of SiC MOSFET is studied. By combining the equivalent potential model, TCAD simulation, and experiment, it is revealed that once the threshold voltage drifts under dynamic gate voltage stress, the static and dynamic characteristics of the third quadrant of SiC MOSFET will change. Furthermore, the current sharing of parallel devices is also affected by dynamic threshold voltage drift. These results provide an effective guide for the third quadrant application of SiC MOSFET.
引用
收藏
页码：483 / 487
页数：5
相关论文
共 50 条
  • [1] Analyzing the Changes in the Third Quadrant Characteristics of SiC MOSFET Induced by Threshold Drift
    Tang, Lei
    Jiang, Huaping
    Liao, Ruijin
    Zhong, Xiaohan
    Zhao, Ke
    Xiao, Nianlei
    Huang, Yihan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (04) : 2342 - 2348
  • [2] Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant
    Masson, Matthieu
    Cousineau, Marc
    Rouger, Nicolas
    Richardeau, Frederic
    2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE, 2023,
  • [3] A Physical Explanation of Threshold Voltage Drift of SiC MOSFET Induced by Gate Switching
    Jiang, Huaping
    Qi, Xiaowei
    Qiu, Guanqun
    Zhong, Xiaohan
    Tang, Lei
    Mao, Hua
    Wu, Zebing
    Chen, Honggang
    Ran, Li
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (08) : 8830 - 8834
  • [4] Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current
    Guo, Chunsheng
    Cui, Shaoxiong
    Li, Yumeng
    Yao, Bojun
    Zhang, Yamin
    Zhu, Hui
    Zhang, Meng
    Feng, Shiwei
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (08) : 9629 - 9637
  • [5] Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET
    Jiang, Huaping
    Zhong, Xiaohan
    Qiu, Guanqun
    Tang, Lei
    Qi, Xiaowei
    Ran, Li
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (09) : 1284 - 1287
  • [6] Investigation Into the Third Quadrant Characteristics of Silicon Carbide MOSFET
    Tang, Lei
    Jiang, Huaping
    Zhong, Xiaohan
    Qiu, Guanqun
    Mao, Hua
    Jiang, Xiaofeng
    Qi, Xiaowei
    Du, Changhong
    Peng, Qianlei
    Liu, Li
    Ran, Li
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2023, 38 (01) : 1155 - 1165
  • [7] Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability
    Cai, Yumeng
    Sun, Peng
    Zhang, Yuankui
    Chen, Cong
    Zhao, Zhibin
    Li, Xuebao
    Qi, Lei
    Chen, Zhong
    Nee, Hans-Peter
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (11) : 14630 - 14642
  • [8] Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction
    Jiang, Xi
    Wang, Jun
    Yu, Hengyu
    Chen, Jianjun
    Zeng, Zhong
    Yang, Xin
    Shen, Z. John
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (04) : 3757 - 3768
  • [9] A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics
    Wu, Hao
    Li, Xuan
    Deng, Xiaochuan
    Wu, Yangyang
    Ding, Jiawei
    Peng, Wensong
    Zhang, Bo
    MICROMACHINES, 2024, 15 (01)
  • [10] Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques
    Ullmann, B.
    Puschkarsky, K.
    Waltl, M.
    Reisinger, H.
    Grasser, T.
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2019, 19 (02) : 358 - 362
12345