A tight-binding molecular dynamics study of the dissociation of boron clusters in c-Si

Boron clusters with silicon self-interstitials have been implicated in the phenomenon of transient enhanced diffusion (TED) following ion implantation of boron and subsequent annealing steps. This paper explores possible dissolution mechanisms for boron-interstitial clusters during the simulation of a typical annealing process. Using tight-binding molecular dynamics (TBMD) and employing a Goodwin-Skinner-Pettifor sp-based TB model, we have been able to observe the complete dissolution of a B4I4 cluster into the surrounding crystalline silicon matrix. Many unsuccessful attempts to observe dissolution are also presented, highlighting the effect of cluster stability, temperature and the role of vacancies in cluster dissolution. Though we can make no unambiguous statements on the definitive dissolution mechanism of boron-defect clusters based on one successful dissolution event, we can hint at key events that appear to be important, such as the diffusion of self-interstitials (presciently predicted by Pelaz et al. ), the "stranding" of boron atoms in their wake, and the importance of mobile boron-self-interstitial (B-I) pairs. The intrinsic diffusivity of boron in a c-Si lattice and its retardation of the diffusivity of Si self-interstitials is also discussed.