The formation of porous anodic films on Al was carried out in electrolytes based on 0.5 M (NH4)(2)SO4 with the addition of NH4F. The anodization was performed in two stages. In the first stage the formation voltage is reached at a scan rate of 50 mV s(-1). In the second stage, the anodization was continued tensiostatically for up to 1 hour. Current density / formation voltage (first stage) and current density / time curves (second stage) were found to be in agreement with previous results of other authors. The current efficiency of film formation has been estimated by determining the concentration of Al, dissolved in electrolyte during anodization by inductively coupled plasma optical emission spectrometry (ICP-OES). Assuming that all the Al ions that migrate through the film are ejected in the solution, the transference number for Al3+ is also estimated. The obtained estimates allowed the determination of the total porosity of the alumina templates by re-anodization in 1 M AS/DMF (ammonium salycilate in dimethyl formamide) electrolyte. The obtained porosity values decreased with the increased voltage in the tensiodynamic stage and slightly increased with the time during the tensiostatic stage, in general agreement with the results, reported during porous anodization of Al in acidic electrolytes.
机构:
Univ Autonoma Metropolitana, Dept Quim, Area Electroquim, Mexico City 09340, DF, MexicoUniv Autonoma Metropolitana, Dept Quim, Area Electroquim, Mexico City 09340, DF, Mexico
Acevedo-Pena, Prospero
Lartundo-Rojas, L.
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Inst Politecn Nacl, Ctr Nanociencias & Micro & Nanotecnol, UPALM, Zacatenco Mexico 07738, DF, MexicoUniv Autonoma Metropolitana, Dept Quim, Area Electroquim, Mexico City 09340, DF, Mexico
Lartundo-Rojas, L.
Gonzalez, Ignacio
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Univ Autonoma Metropolitana, Dept Quim, Area Electroquim, Mexico City 09340, DF, MexicoUniv Autonoma Metropolitana, Dept Quim, Area Electroquim, Mexico City 09340, DF, Mexico
机构:
Hanyang Univ, Dept Chem Engn, Seoul 04763, South KoreaHanyang Univ, Dept Chem Engn, Seoul 04763, South Korea
Ahn, Jun Hwan
You, Tae-Sun
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Hanyang Univ, Dept Chem Engn, Seoul 04763, South KoreaHanyang Univ, Dept Chem Engn, Seoul 04763, South Korea
You, Tae-Sun
Lee, Sang-Min
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Hanyang Univ, Dept Chem Engn, Seoul 04763, South KoreaHanyang Univ, Dept Chem Engn, Seoul 04763, South Korea
Lee, Sang-Min
Esken, Daniel
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Evonik Operat GmbH, Rodenbacher Chaussee 4, D-63457 Hanau, GermanyHanyang Univ, Dept Chem Engn, Seoul 04763, South Korea
Esken, Daniel
Dehe, Daniel
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Evonik Operat GmbH, Rodenbacher Chaussee 4, D-63457 Hanau, GermanyHanyang Univ, Dept Chem Engn, Seoul 04763, South Korea
Dehe, Daniel
Huang, Yuan-Chang
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Evonik Taiwan Ltd, Min Sheng Rd,Sec 3, Taipei 10596, TaiwanHanyang Univ, Dept Chem Engn, Seoul 04763, South Korea
Huang, Yuan-Chang
Kim, Dong-Won
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Hanyang Univ, Dept Chem Engn, Seoul 04763, South Korea
Hanyang Univ, Inst Nano Sci & Technol, Seoul 04763, South KoreaHanyang Univ, Dept Chem Engn, Seoul 04763, South Korea
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Tohoku Univ, Inst Multidisciplinary Res Adv Mat IMRAM, Sendai, Miyagi 9808577, JapanTohoku Univ, Inst Multidisciplinary Res Adv Mat IMRAM, Sendai, Miyagi 9808577, Japan
Ishizaki, Yuya
Yamamoto, Shunsuke
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Tohoku Univ, Inst Multidisciplinary Res Adv Mat IMRAM, Sendai, Miyagi 9808577, JapanTohoku Univ, Inst Multidisciplinary Res Adv Mat IMRAM, Sendai, Miyagi 9808577, Japan
Yamamoto, Shunsuke
Miyashita, Tokuji
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Tohoku Univ, Inst Multidisciplinary Res Adv Mat IMRAM, Sendai, Miyagi 9808577, JapanTohoku Univ, Inst Multidisciplinary Res Adv Mat IMRAM, Sendai, Miyagi 9808577, Japan
Miyashita, Tokuji
Mitsuishi, Masaya
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Tohoku Univ, Inst Multidisciplinary Res Adv Mat IMRAM, Sendai, Miyagi 9808577, JapanTohoku Univ, Inst Multidisciplinary Res Adv Mat IMRAM, Sendai, Miyagi 9808577, Japan