Modeling and simulation of high-power broad-area semiconductor lasers with optical feedback from different external cavities

被引：0
|
作者：
Radziunas, M. [1 ]
Bandelow, U. [1 ]
Bree, C. [1 ]
Raab, V. [2 ]
Wenzel, H. [3 ]
Zeghuzi, A. [3 ]
机构：
[1] Weierstrass Inst, Mohrenstr 39, D-10117 Berlin, Germany
[2] Raab Photon GmbH, Amundsenstr 10, D-14469 Potsdam, Germany
[3] Ferdinand Braun Inst, Leibniz Inst Hochstfrequenztech, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
来源：
2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We apply a dynamic (1+2)-dimensional traveling wave model and a corresponding parallel optoelectronic solver for simulations of broad-area semiconductor lasers. To avoid a significant slow-down of the numerical simulations in the presence of an external cavity, we perform a time-efficient modeling of the optical feedback. Finally, we present several simulated examples of parasitic optical feedback or an intended beam shaping by a specially designed external cavity.
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页码：7 / 8
页数：2
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