Photovoltaic device applications of porous microcrystalline silicon

被引:14
|
作者
Duttagupta, SP
Fauchet, PM [1 ]
Ribes, AC
Tiedje, HF
Damaskinos, S
Dixon, TE
Brodie, DE
Kurinec, SK
机构
[1] Univ Rochester, Dept Elect Engn, Rochester, NY 14627 USA
[2] Univ Waterloo, Dept Phys, Waterloo, ON N2L 3G1, Canada
[3] Rochester Inst Technol, Dept Microelect Engn, Rochester, NY 14623 USA
[4] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
[5] Univ Rochester, Inst Opt, Rochester, NY 14627 USA
基金
美国国家科学基金会;
关键词
photovoltaic devices; anodization; porous microcrystalline Si;
D O I
10.1016/S0927-0248(97)00280-8
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We report the fabrication of photovoltaic devices by the anodization of microcrystalline silicon films on single-crystal silicon substrates. The porosity of the films was varied from 20% to 60% by changing the anodization conditions. The influence of the porosity on the series resistance (R-s), the reflectance, and the spectral response of the devices was studied. In order to determine R-s, the current-voltage characteristics were analyzed, both in the dark and under illumination. We observed that the value of R-s increased from 3 to 100 Ohm and the value of the reflectance decreased from 24% to 7% when the porosity increased from 20% to 60%. The optimum device performance (fill factor of 0.53 and efficiency of 7.2%), which was achieved for a porosity of 40% and can be improved further, resulted from a trade-off between good electrical and optical properties. From optical beam-induced current images, the homogeneity of the devices was found to be excellent and no defects were detected. Our results indicate that the fabrication of commercial solar cells based on porous microcrystalline Si (PMSi) is possible. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:271 / 283
页数:13
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