Low complexity RF-MEMS switch optimized for operation up to 120°C

被引：0
|
作者：
Stehle, A. [1 ]
Siegel, C. [1 ]
Ziegle, V. [1 ]
Schoenlinner, B. [1 ]
Prechtel, U. [1 ]
Thilmont, S. [2 ]
Seidel, H. [2 ]
Schmid, U. [2 ]
机构：
[1] EADS Deutschland GmbH, Innovat Works, SI MW, D-81663 Munich, Germany
[2] Univ Saarland, Chair Micromechan Microfluid Microactuators, D-66041 Saarbrucken, Germany
来源：
2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2 | 2007年
关键词：
RF-MEMS; microwave; switch; beaded beams; thermal oxide; aluminium; alloy; temperature;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a RF-MEMS switch optimized for high temperature range of operation using a temperature stable metallization. The devices are fabricated on a silicon substrate in very low complexity process using only one metallization. The performed measurements characterize the properties of the metallization and also the properties of the entire switch in terms of creeping behaviour, RF performance and charging effects at different temperatures. A stable operation up to 120 degrees C is demonstrated and the principle reliability of the switches is shown by 109 switching cycles.
引用
收藏
页码：351 / +
页数：2
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