A new ISFET sensor interface circuit

被引：0
|
作者：
Palán, B [1 ]
dos Santos, FV [1 ]
Karam, JM [1 ]
Courtois, B [1 ]
Husák, M [1 ]
机构：
[1] TIMA Lab, F-38031 Grenoble, France
来源：
EUROSENSORS XII, VOLS 1 AND 2 | 1998年
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This article presents a new ISFET sensor interface circuit designed in the frame of the BARMINT ESPRIT IV project. A differential configuration with two ISFET devices (one with Si3N4 sensitive layer, the other with SiO2) is monolithically realized in a 2.5 mu m CMOS technology. The sensor interface is simple, has low silicon area requirements and has a current output analog signal.
引用
收藏
页码：171 / 174
页数：4
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