Growth of MnSb and Mn2Sb epitaxial layers on GaAs substrates by hot-wall epitaxy

被引：4

作者：

Tatsuoka, H ^{[1
]}

Kuwabara, H ^{[1
]}

Oshita, M ^{[1
]}

Nakamura, T ^{[1
]}

Fujiyasu, H ^{[1
]}

机构：

[1] SHIZUOKA UNIV, ELECT RES INST, HAMAMATSU, SHIZUOKA 432, JAPAN

来源：

THIN SOLID FILMS | 1996年 / 281卷

关键词：

epitaxy; heterostructures; manganese; X-ray diffraction;

D O I：

10.1016/0040-6090(96)08684-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MnSb and MnSb-Mn2Sb mixed layers were grown on GaAs(100), (111)A and (111)B substrates by hot-wall epitaxy under various growth conditions. It was found that Sb/Mn flux ratio affected the orientation of MnSb layers grown on GaAs( 100). The crystalline quality of MnSb layers grown on GaAs(111) depends on the growth conditions, such as substrate temperature, Sb/Mn Aux ratio and substrate polarity. The crystalline quality of the layers on GaAs(111)B was superior to that of the layers on GaAs(111)A. The quality of the layers on GaAs(111)B, however, was steeply degraded as increasing Sb/Mn flux ratio. The Mn2Sb domains were generated in the layers grown on GaAs(111) substrates at high substrate temperature.

引用

页码：499 / 502

页数：4

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