Electron Radiation during Planar Channeling in Crystals with the CsCl Structure

被引:3
|
作者
Maksyuta, N. V. [1 ]
Vysotskii, V. I. [1 ]
Efimenko, S. V. [1 ]
Slinchenko, Y. A. [1 ]
机构
[1] Shevchenko Kyiv Natl Univ, UA-01601 Kiev, Ukraine
来源
JOURNAL OF SURFACE INVESTIGATION | 2019年 / 13卷 / 06期
关键词
plane interaction potentials; channeling of relativistic electrons; crystals with the CsCl structure; transverse energy levels and corresponding wave functions; radiation during channeling;
D O I
10.1134/S1027451019060417
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The interaction potentials between electrons and the principal charged (111) and (100) planes in CsCl-type crystals are calculated using the Moliere, Firsov, Barrett, and Doyle-Turner approximations for single-particle ion potentials. The features of the structures of these interaction potentials are studied without considering the influence of the temperature factor and with its inclusion. For relativistic electrons with Lorentz factors of gamma = 25, 50, 75 channeled in these planes, the transverse energy levels and the wave functions corresponding to them are numerically found for all crystals with CsCl-type structures. Based on these data, the spectra of channeling radiation are calculated under the condition that electron beams (with an angular dispersion theta(0) equal to zero and to approximate to 0.3 mrad) are incident at zero angles with respect to the crystallographic (111) and (100) planes. It is shown that the generated radiation is most intense in the (100) planes of the CsCl-type crystals.
引用
收藏
页码:1296 / 1301
页数:6
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