Effects of 0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use

被引：42

作者：

Wang Rong ^{[1
,2
,3
]}

Liu Yunhong ^{[2
]}

Sun Xufang ^{[2
]}

机构：

[1] Beijing Normal Univ, Minist Educ, Key Lab Beam Technol & Mat Modificat, Beijing 100875, Peoples R China

[2] Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China

[3] Beijing Radiat Ctr, Beijing 100875, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 05期

基金：

中国国家自然科学基金;

关键词：

GaInP/GaAs/Ge solar cell; proton irradiation; spectral response;

D O I：

10.1016/j.nimb.2007.12.076

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

GaInP/GaAs/Ge triple-junction solar cells were irradiated with 0.28, 0.62 and 2.80 MeV protons with fluences ranging from 1 x 10(10) cm(-2) to 1 x 10(13) cm(-2). Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements. The degradation rates of the short circuit current, open circuit voltage, and maximum power output increase with fluence, but decrease with increasing proton energy. It was also observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：745 / 749

页数：5

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