Effects of 0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use

被引：42
|
作者：
Wang Rong [1 ,2 ,3 ]
Liu Yunhong [2 ]
Sun Xufang [2 ]
机构：
[1] Beijing Normal Univ, Minist Educ, Key Lab Beam Technol & Mat Modificat, Beijing 100875, Peoples R China
[2] Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China
[3] Beijing Radiat Ctr, Beijing 100875, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 05期
基金：
中国国家自然科学基金;
关键词：
GaInP/GaAs/Ge solar cell; proton irradiation; spectral response;
D O I：
10.1016/j.nimb.2007.12.076
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
GaInP/GaAs/Ge triple-junction solar cells were irradiated with 0.28, 0.62 and 2.80 MeV protons with fluences ranging from 1 x 10(10) cm(-2) to 1 x 10(13) cm(-2). Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements. The degradation rates of the short circuit current, open circuit voltage, and maximum power output increase with fluence, but decrease with increasing proton energy. It was also observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：745 / 749
页数：5
相关论文
共 50 条
  • [1] 0.28-2.80 MeV proton irradiation effects on GaInP/GaAs/Ge multi-junction solar cells for space applications
    Liu, Yunhong
    Sun, Xufang
    Wang, Rong
    He Jishu/Nuclear Techniques, 2008, 31 (01): : 47 - 49
  • [2] Low-energy proton irradiation effects of GaInP/GaAs/Ge triple-junction solar cells for space use
    Key Laboratory of Beam Technology and Materials Modification, Beijing Normal University, Beijing 100875, China
    不详
    不详
    Pan Tao Ti Hsueh Pao, 2007, 10 (1599-1602): : 1599 - 1602
  • [3] Effects of 1.0-11.5 MeV Electron Irradiation on GaInP/GaAs/Ge Triple-junction Solar Cells for Space Applications
    Wang Rong
    Lu Ming
    Yi Tian-Cheng
    Yang Kui
    Ji Xiao-Xia
    CHINESE PHYSICS LETTERS, 2014, 31 (08)
  • [4] Effects of 50 keV and 100 keV Proton Irradiation on GaInP/GaAs/Ge Triple-Junction Solar Cells
    Wang Rong
    Feng Zhao
    Liu Yunhong
    Lu Ming
    PLASMA SCIENCE & TECHNOLOGY, 2012, 14 (07) : 647 - 649
  • [5] Proton irradiation effects on GaInP/GaAs/Ge triple junction cells
    Gao, Chen
    Cao, Rongxing
    Li, Linhuan
    Mei, Bo
    Zhang, Hongwei
    Lv, He
    Xue, Yuxiong
    Zeng, Xianghua
    OPTICAL MATERIALS, 2023, 142
  • [6] Effects of 50keV and 100keV Proton Irradiation on GaInP/GaAs/Ge Triple-Junction Solar Cells
    王荣
    冯钊
    刘运宏
    鲁明
    Plasma Science and Technology, 2012, (07) : 647 - 649
  • [7] Effects of 50keV and 100keV Proton Irradiation on GaInP/GaAs/Ge Triple-Junction Solar Cells
    王荣
    冯钊
    刘运宏
    鲁明
    Plasma Science and Technology, 2012, 14 (07) : 647 - 649
  • [8] Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell
    Hu Jian-Min
    Wu Yi-Yong
    Qian Yong
    Yang De-Zhuang
    He Shi-Yu
    ACTA PHYSICA SINICA, 2009, 58 (07) : 5051 - 5056
  • [9] Advanced GaInP/ga(In)As/Ge triple-junction space solar cells
    Strobl, G
    HIlgarth, J
    Nell, M
    Dietrich, R
    Kern, R
    Köstler, W
    Bett, AW
    Dimroth, F
    Schubert, U
    Flores, C
    Campesato, R
    Timò, G
    La Roche, G
    Signorini, C
    Bogus, K
    PROCEEDINGS OF THE SIXTH EUROPEAN SPACE POWER CONFERENCE (ESPC), 2002, 502 : 539 - 543
  • [10] Displacement Damage Equivalence of Neutron and Proton Radiations in Triple-Junction GaInP/GaAs/Ge Solar Cells
    Liu, Lina
    Mei, Bo
    Zheng, Zhongshan
    Wang, Lei
    Bai, Yurong
    Yu, Qingkui
    Li, Pei
    Zhao, Hongda
    Sun, Yichao
    Li, Bo
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, 70 (08) : 1885 - 1891
12345