Method for measuring thermal accommodation coefficients of gases on thin film surfaces using a MEMS sensor structure

被引:15
|
作者
Grau, Mario [1 ]
Voelklein, Friedemann [1 ]
Meier, Andreas [1 ]
Kunz, Christina [1 ]
Heidler, Jonas [1 ]
Woias, Peter [2 ]
机构
[1] RheinMain Univ Appl Sci, Inst Microtechnol, D-65428 Russelsheim, Germany
[2] Univ Freiburg, Dept Microsyst Engn, D-79110 Freiburg, Germany
来源
关键词
ENERGY; EXCHANGE;
D O I
10.1116/1.4948527
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A method for measuring the thermal accommodation coefficient a for surface-/gas interfaces is presented. It allows the determination of a for thin films produced by a variety of deposition technologies, such as chemical vapor deposition, physical vapor deposition, and atomic layer deposition (ALD). The setup is based on two microelectromechanical systems (MEMS) Pirani sensors facing each other in a defined positioning. Because these MEMS sensors show a very high sensitivity in their individual molecular flow regimes, it is possible to measure the accommodation coefficients of gases without the disturbing influence of the transition regime. This paper presents the analytical background and the actual measurement principle. The results for air and nitrogen molecules on sputtered Au and Pt surfaces are presented. (C) 2016 American Vacuum Society.
引用
收藏
页数:7
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