Optimization of the growth temperature of α-Ga2O3 epilayers grown by halide vapor phase epitaxy

被引：52

作者：

Son, Hoki ^{[1
,2
]}

Jeon, Dae-Woo ^{[1
]}

机构：

[1] Korea Inst Ceram Engn & Technol, 15-5 Chungmugong Dong, Jinju Si 52851, Gyeongsangnam D, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, Seoul 02841, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 773卷

关键词：

alpha-Ga2O3; HVPE; Phase transition; Growth temperature; FILM;

D O I：

10.1016/j.jallcom.2018.09.230

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the optimized temperature for the growth of alpha-Ga2O3 on alpha-Al2O3 substrate using halide vapor phase epitaxy. The alpha-Ga2O3 epilayer grown at 470 degrees C exhibited the lowest full-width-at-half-maximum values for the (0006) and (10-14) peaks in the X-ray omega-scan rocking curve, which confirmed that the growth temperature strongly influenced the phase transition of Ga2O3 and affected the crystal quality of the alpha-Ga2O3 epitaxial layers. In addition, the impurity concentration in this alpha-Ga2O3 epilayer as determined by secondary ion mass spectroscopy was found to be in the range of 10(16)-10(18)cm(-3). (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：631 / 635

页数：5

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