Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect

被引：9

作者：

Nifa, Iliass ^{[1
,2
,3
]}

Leroux, Charles ^{[1
,2
]}

Torres, Alphonse ^{[1
,2
]}

Charles, Matthew ^{[1
,2
]}

Blachier, Denis ^{[1
,2
]}

Reimbold, Gilles ^{[1
,2
]}

Ghibaudo, Gerard ^{[3
]}

Bano, Edwige ^{[2
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

[3] IMEP LAHC, MINATEC INPG, 3 Parvis Louis Neel, F-38016 Grenoble, France

来源：

MICROELECTRONIC ENGINEERING | 2017年 / 178卷

关键词：

Hall effect; AlGaN/GaN; 2DEG; Electron density; Electron mobility; HEMTS;

D O I：

10.1016/j.mee.2017.05.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a detailed characterization of 2D Electron Gas in AlGaN/AlN/GaN heterostructure by Hall Effect For this purpose, we have developed a new experimental set-up to carry out Hall Effect measurements on an entire 200/300 mm wafer (rather than a small sample) using a new probe system including a permanent magnet The measurement technique used in this work allows an accurate determination of the carrier concentration and mobility. One of the main issues of this experiment is the determination of the intensity of magnetic induction field (B) applied by the permanent magnet on the top side of the wafer. We first present our methodology for the determination of the magnetic field B. After the validation of the experimental set-up, the electrical characterization results for fully and partially processed GaN-on-Si wafers are presented. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：128 / 131

页数：4

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