Fabrication of Ultrathin Bi2S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors

被引：219
|
作者：
Chen, Guihuan [1 ]
Yu, Yongqiang [1 ,2 ]
Zheng, Kun [2 ]
Ding, Tao [1 ]
Wang, Wenliang [1 ]
Jiang, Yang [2 ]
Yang, Qing [1 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Synerget Innovat Ctr Quantum Informat & Quantum P, Lab Nanomat Energy Convers,Dept Chem, Hefei 230026, Anhui, Peoples R China
[2] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China
来源：
SMALL | 2015年 / 11卷 / 24期
关键词：
BISMUTH SULFIDE BI2S3; ULTRAVIOLET PHOTODETECTORS; FACILE SYNTHESIS; LAYER MOS2; PHOTORESPONSE; GRAPHENE; NANOWIRES; NANORODS; GROWTH; FILMS;
D O I：
10.1002/smll.201403508
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Ultrathin Bi2S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2S3-based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W-1, high detectivity of ≈1011 Jones, relatively fast response time of ≈10 μs, and high flexibility and durability. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2848 / 2855
页数：8
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