Lateral-Coupled Junctionless IZO-Based Electric-Double-Layer Thin-Film Transistors Gated by Solid-State Phosphosilicate Glass Electrolyte

被引：0

作者：

Zhou Ju-Mei ^{[1
,2
]}

Gao Xiao-Hong ^{[1
]}

Zhang Hong-Liang ^{[2
]}

机构：

[1] Ningbo Dahongying Univ, Sch Mech & Elect Engn, Ningbo 315175, Zhejiang, Peoples R China

[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2015年 / 32卷 / 03期

基金：

中国国家自然科学基金;

关键词：

LOW-VOLTAGE; DIELECTRICS;

D O I：

10.1088/0256-307X/32/3/038502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We describe the lateral-coupled junctionless indium-zinc-oxide (IZO) thin-film transistors (TFTs) in which there are no junctions between channel and source/drain electrodes and with solid-state phosphosilicate glass electrolyte (PSG) gating. Due to the three-dimensional high proton conduction and lateral coupled electric-double-layer (EDL) capacitance (> 1 mu F/cm(2)) of the PSG, the low voltage (2.0 V) junctionless IZO TFTs and the dual coplanar gate devices are obtained. An AND logic function is demonstrated on the basis of the junctionless EDL-TFTs. Such devices are promising for applications in pH sensors, humidity sensors, biosensors, and neuron network simulation.

引用

页数：4

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