Interface phonons and polaron effect in II-VI quantum wells

被引：1
|
作者：
Maslov, Alexander Yu. [1 ]
Proshina, Olga V. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 6 | 2010年 / 7卷 / 06期
关键词：
II-VI semiconductors; quantum wells; large polarons; excitons; electron states;
D O I：
10.1002/pssc.200983246
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The theory of large radius polaron in II-VI quantum wells is developed. The analytic expressions for polaron binding energy are obtained for the electron, the hole and the exciton polarons. The numerical results obtained show that the strong electron-phonon interaction conditions can be realized in the quantum wells based on a number of II-VI compounds. The influence of the interface optical phonons on the polaron states is accounted for. The extent of interface phonon influence depends on the properties both of the quantum well and of the barrier materials. It is shown that the interaction of charge particles with the interface phonons can lead to the enhancement as well as to the reduction of the polaron effects. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1609 / 1611
页数：3
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