Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal-organic chemical vapor deposition

被引：1

作者：

Fang, H. ^{[1
]}

Sang, L. W. ^{[1
]}

Zhu, W. X. ^{[1
]}

Long, H. ^{[1
]}

Yu, T. J. ^{[1
]}

Yang, Z. J. ^{[1
]}

Zhang, G. Y. ^{[1
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期

关键词：

Cathodoluminescence; Planar defects; Transmission electron microscopy; Metalorganic vapor phase epitaxy; Nitrides; MULTIPLE-QUANTUM WELLS; GALLIUM NITRIDE; FILMS; DEPENDENCE; PRESSURE; EMISSION; LAYER;

D O I：

10.1016/j.jcrysgro.2010.10.214

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). Cathodoluminescence (CL) images and depth-profiling spectra show Basel stacking faults (BSFs) related emission at 3.42 eV, yellow band emission at 2.25 and 3.00 eV emission bands of the a-plane GaN. From the results of CL and transmission electron microscopy (TEM), the origin of the blue emission band was attributed to donor-acceptor pair (DAP) emission correlated with prismatic stacking faults (PSFs). (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：423 / 426

页数：4

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