Grain growth kinetics of nanocrystalline SnO2 for long-term isothermal annealing

被引:68
|
作者
Lai, JKL [1 ]
Shek, CH [1 ]
Lin, GM [1 ]
机构
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
关键词
nanocrystalline materials; oxides; grain growth; kinetics; X-ray diffraction (XRD);
D O I
10.1016/S1359-6462(03)00296-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Long-term isothermal grain growth kinetics of nanocrystalline SnO2 was investigated. A limiting grain size for each annealing temperature was observed and the grain growth behaviour can be described with a non-linear relaxation equation. Structural relaxation of the interfaces in nanostructure materials plays an important role in the grain growth process. (C) 2003 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:441 / 446
页数:6
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