Epitaxial growth of Fe3Si/GaAs(001) hybrid structures

被引：141
|
作者：
Herfort, J [1 ]
Schönherr, HP [1 ]
Ploog, KH [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 19期
关键词：
D O I：
10.1063/1.1625426
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have established an optimized growth temperature range, namely, 150 degreesC<T-G<250 degreesC, where ferromagnetic Fe3Si/GaAs(001) hybrid structures with high crystalline and interfacial quality can be fabricated by molecular-beam epitaxy. The composition of the Fe3Si layers, which can be regarded as a Heusler alloy, was tuned within the stable Fe3Si phase. The layers show high magnetic moments with a value of 1050 emu/cm(3), which is close to that of bulk Fe3Si. (C) 2003 American Institute of Physics.
引用
收藏
页码：3912 / 3914
页数：3
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