Resolved band-edge luminescence of AlN on different substrates

被引：0
|
作者：
Teofilov, N [1 ]
Thonke, K [1 ]
Sauer, R [1 ]
Ebling, DG [1 ]
Kirste, L [1 ]
Benz, KW [1 ]
机构：
[1] Univ Ulm, Abt Halbleiterphys, D-89069 Ulm, Germany
来源：
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷
关键词：
AlN; cathodoluminescence; bound excitons; MBE; hetero-epitaxial growth;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Aluminum nitride (AlN) films grown by molecular beam epitaxy (MBE) on sapphire, SiC, and Si substrates have been investigated by cathodoluminescence in the spectral range from 2(...)6.3 eV. Although still defect related bands around 3.2 eV are dominating the low temperature (T = 77 K) spectra, near-band-edge excitonic transitions around 6.1 eV with multiple, relatively sharp lines are observed.
引用
收藏
页码：174 / 177
页数：4
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