Ferromagnetism in Ti-doped ZnO thin films

被引：27
|
作者：
Shao, Q. [1 ,2 ]
Wang, C. [1 ,2 ]
Zapien, J. A. [1 ,2 ,3 ]
Leung, C. W. [4 ,5 ]
Ruotolo, A. [1 ]
机构：
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Ctr Funct Photon, Kowloon, Hong Kong, Peoples R China
[3] City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Kowloon, Hong Kong, Peoples R China
[4] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[5] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 17期
基金：
美国国家科学基金会;
关键词：
LUMINESCENCE; TEMPERATURE; STATES;
D O I：
10.1063/1.4917514
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report our study on the origin of ferromagnetism in Ti-doped ZnO. A series of Ti doped ZnO films with increasing concentration of Ti dopant were grown and characterized in terms of structural, electrical, and magnetic properties. We found that Ti has a low solubility in the ZnO wurtzite structure. This favors stabilization of a large number of Zn vacancies, and theoretical calculations have shown that they can carry substantial magnetic moment. A carrier mediated exchange interaction between Zn vacancies is at the origin of the surprisingly high magnetic moment we measure in this compound. (C) 2015 AIP Publishing LLC.
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收藏
页数：4
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