OPTICAL-ELECTRICAL PROPERTIES AND CORROSION BEHAVIOR OF TANTALUM-DOPED INDIUM TIN OXIDE FILMS DEPOSITED BY MAGNETRON SPUTTERING

被引:0
|
作者
Dong, Xianping [1 ]
Zhang, Bo [1 ]
Wu, Jiansheng [1 ]
机构
[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
来源
THERMEC 2009, PTS 1-4 | 2010年 / 638-642卷
关键词
Indium tin oxide; Tantalum; Optical-electrical properties; Corrosion behavior; Environments; LIGHT-EMITTING DIODE; ITO THIN-FILMS; TEMPERATURE;
D O I
10.4028/www.scientific.net/MSF.638-642.2897
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tantalum-doped indium tin oxide films were deposited on glass substrate by co-sputtering with two-targets. Tantalum-doping strengthened the orientation of the (400) plane and resulted in better crystalline structure, larger grain size and lower surface roughness. Due to the better crystallizability of the tantalum-doping films, carrier concentration and the mobility were increased. Tantalum-doping revealed better optical electrical properties. The environmental effects on electrical properties stability and long-term reliability of tantalum-doped films in NaCl, Na(2)SO(4) and HCl solutions at 25 degrees C were also investigated, which simulated corrosion behavior in marine, industrial and acidic environments. The relative resistance change ((Delta)R/R) for tantalum-doped films revealed that the films had the best electrical properties stability and long-term reliability in these aggressive environments. The pre-formation of a protective oxide layer on the surface of the films had an enhancing effect on the corrosion properties.
引用
收藏
页码:2897 / 2902
页数:6
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