Optimisation of SiNx:H anti-reflection coatings for silicon solar cells

被引：12

作者：

Hofstetter, J. ^{[1
]}

del Canizo, C. ^{[1
]}

Ponce-Alcantara, S. ^{[1
]}

Luque, A. ^{[1
]}

机构：

[1] Univ Politecn Madrid, Inst Energia Solar, ETSI Telecomun, Ciudad Univ, Madrid 28040, Spain

来源：

2007 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS | 2007年

关键词：

double layer antireflection coating; silicon nitride; silicon solar cell;

D O I：

10.1109/SCED.2007.383961

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The deposition of SiNx:H as anti-reflection coating has become a standard step in industrial production of silicon solar cells. In the present work the improvement of the anti-reflection properties and thus the improvement of the short circuit current density by deposition of a SiNx:H double layer coating are investigated. It is shown that an optimised double layer coating with indices n(1) approximate to 1.8 and n(2) approximate to 2.1 only leads to an 1.3% improvement of short circuit current in comparison to an optimised single layer coating with n approximate to 1.9. But the deposition of a SiNx:H layer with higher refractive index on the silicon surface is supposed to lead to a good surface and bulk passivation. The passivating properties of the optically optimised double layer coating will he investigated in following experiments.

引用

页码：131 / +

页数：2

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