Thin film electrolytes:: Yttria stabilized zirconia and ceria

被引：4
|
作者：
Hartmanová, M
Jergel, M
Thurzo, I
Kundracik, F
Gmucová, K
Chromik, S
Ortega, L
机构：
[1] Slovak Acad Sci, Inst Phys, Bratislava 84228, Slovakia
[2] Comenius Univ, Fac Math & Phys, Dept Radiophys, Bratislava 84215, Slovakia
[3] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia
[4] CNRS, Cristallog Lab, F-38042 Grenoble, France
来源：
RUSSIAN JOURNAL OF ELECTROCHEMISTRY | 2003年 / 39卷 / 05期
关键词：
ELECTRICAL-PROPERTIES; EPITAXIAL-GROWTH; SILICON SUBSTRATE; OXYGEN ELECTRODES; VAPOR-DEPOSITION; OHMIC RESISTANCE; CONTACT AREA; DOPED CERIA; CONDUCTIVITY; EVAPORATION;
D O I：
10.1023/A:1023864524128
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Data obtained in an investigation of yttria-stabilized zirconia (YSZ) and ceria thin films are reviewed and discussed with special regard to the preparation conditions, namely, the temperature of deposition and the post-deposition thermal treatment of films. The structure, phase composition, electrical and dielecric properties, and problems that can be met when measuring effective and real ohmic resistances are compared with the results reported by other authors. The YSZ (CeO2)/Si interfaces arc studied by means of deep level transient spectroscopy and feedback charge method capacitance-voltage measurements.
引用
收藏
页码：478 / 486
页数：9
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