Bi4Ti3O12 and Bi3.25La0.75Ti3O12 Thin Films Prepared by RF Magnetron Sputtering

被引：0
|
作者：
Yang, Jian-Ping [1 ,2 ]
Li, Xing-Ao [1 ,2 ]
Zuo, An-You [2 ]
Yuan, Zuo-Bin [2 ]
Weng Zhu-Lin [2 ]
机构：
[1] Nanjing Univ Posts & Telecommun, Coll Sci, Nanjing 210046, Jiangsu, Peoples R China
[2] Hubei Univ Nationalities, Coll Sci, Enshi 445000, Peoples R China
来源：
HIGH-PERFORMANCE CERAMICS VI | 2010年 / 434-435卷
关键词：
BTO thin film; BLT thin film; RE magnetron sputtering; ferroelectric property; CHEMICAL SOLUTION DEPOSITION; FERROELECTRIC PROPERTIES; BUFFER LAYER; POLARIZATION; ENHANCEMENT; CAPACITORS; FATIGUE;
D O I：
10.4028/www.scientific.net/KEM.434-435.296
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious.
引用
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页码：296 / +
页数：2
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