Effect of the ionic-strength of the gating-solution on a bioelectronic response

被引:0
|
作者
Macchia, Eleonora [1 ,2 ]
Manoli, Kyriaki [1 ]
Holtzer, Brigitte [1 ]
Di Franca, Cinzia [3 ]
Torricelli, Fabrizio [4 ]
Picca, Rosaria Anna [1 ]
Palazzo, Gerardo [1 ]
Scamarcio, Gaetano [5 ]
Torsi, Luisa [1 ]
机构
[1] Univ Bai Aldo Moro, Dipartimento Chim, Bari, Italy
[2] Abo Akad Univ, Fac Sci & Engn, Turku, Finland
[3] CNR, Ist Foton & Nanotecnol, Bari, Italy
[4] Univ Brescia, Dipartimento Ingn Informaz, Brescia, Italy
[5] Univ Bari Aldo Moro, Dipartimento Fis M Merlin, Bari, Italy
来源
2019 IEEE 8TH INTERNATIONAL WORKSHOP ON ADVANCES IN SENSORS AND INTERFACES (IWASI) | 2019年
关键词
Electrolyte-Gated Thin-Film-Transistors; Single Molecule detection with a Transistor - SiMoT; LABEL-FREE;
D O I
10.1109/iwasi.2019.8791318
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Bioelectronic organic transistors have been recently proposed as a disruptive wide-field label-free single-molecule biosensing technology. Key relevant for this millimetric sized electrolyte-gated field-effect-transistor is a self-assembled-monolayer attached to the gate comprising a highly-packed layer of recognition elements. Here a dedicated study of the FET sensing response as a function of the salinity of the electrolyte solution is proposed. It has been demonstrated that the device response is dramatically reduced at high ionic strength and this offer the rationale for choosing to operate the device in pure water where the Debye length, lambda(D), is 100 nm.
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页码:221 / 223
页数:3
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