Electro-elastic dislocation fields in a piezoelectric sandwich structure

被引:1
|
作者
Nowacki, J. P. [1 ]
Alshits, V. I. [2 ]
Radowicz, A. [3 ]
机构
[1] Polish Japanese Inst Informat Technol, Warsaw, Poland
[2] Shubnikov Inst Crystallog RAS, Moscow 117901, Russia
[3] Kielce Univ Technol, PL-25314 Kielce, Poland
关键词
Piezoelectricity; anisotropy; 1D inhomogeneity; line defect; CRYSTALS;
D O I
10.3233/JAE-2010-1264
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The coupled 2D electro-elastic fields are found in the piezoelectric sandwich structure (substrate-layer-substrate) of unrestricted anisotropy containing the straight-line source parallel to the interfaces. The general line source consists of the four coinciding sources: the line of forces, the charged line, the dislocation line and its electrostatic analogue. The obtained solution is presented in a form of convergent Fourier integral. The integrand is implicitly expressed in terms of the eigenvalues and the eigenvectors of the generalized Stroh matrix. Determination of these eigenvalues and eigenvectors requires additional computing. Specific features of the found fields are analyzed.
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页码:1383 / 1390
页数:8
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