Investigation of a model molecular-electronic rectifier with an evaporated Ti-metal top contact

被引：87

作者：

Chang, SC ^{[1
]}

Li, ZY ^{[1
]}

Lau, CN ^{[1
]}

Larade, B ^{[1
]}

Williams, RS ^{[1
]}

机构：

[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 15期

关键词：

D O I：

10.1063/1.1616989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular-electronic devices are usually fabricated by sandwiching organic monolayers between electrodes. Questions arise about whether the molecules react with a deposited metal. We investigated a self-assembled monolayer (SAM) of alkoxynaphthalene thiol (I) on Pt before and after Ti film deposition. The SAM on Pt was highly ordered. Ti deposition resulted in some reaction with the alkyl chains and disordering, but the napthelenes remained intact. Pinhole free films of the monolayers were characterized by current-voltage measurements, revealing that a rectification ratio as high as 5x10(5) was achieved. (C) 2003 American Institute of Physics.

引用

页码：3198 / 3200

页数：3

共 50 条

[21] Ab initio investigation on electron transfer in molecular electronic devices: A minimal model study
Lu, Shen-Zhuang
Liu, Wenjian
Li, Xiang-Yuan
CHEMICAL PHYSICS LETTERS, 2007, 439 (1-3) : 85 - 90
[22] A molecular orbital model for the electronic structure of transition metal atoms in silcate and aluminate alloys
Lucovsky, G
Whitten, JL
Zhang, Y
APPLIED SURFACE SCIENCE, 2002, 190 (1-4) : 48 - 55
[23] A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys
Lucovsky, G
Whitten, JL
Zhang, Y
MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 329 - 334
[24] A DFT investigation of the molecular and electronic structures of 19-electron transition-metal sandwich complexes
Ogliaro, F
Halet, JF
Astruc, D
Saillard, JY
NEW JOURNAL OF CHEMISTRY, 2000, 24 (05) : 257 - 259
[25] In situ spectroscopic investigation of the molecular and electronic Structures of SiO2 supported surface metal oxides
Lee, Edward L.
Wachs, Israel E.
JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (39): : 14410 - 14425
[26] Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-scale Ohmic Contact
Takada, Yukihiro
Muraguchi, Masakazu
Endoh, Tetsuo
Nomura, Shintaro
Shiraishi, Kenji
TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, 2011, 470 : 43 - +
[27] Investigation of the contact resistance between Ti/TiN and Ru in metal-1/plate contacts of ruthenium insulator silicon capacitor
Yun, JY
Kim, BH
Seo, JH
Lee, JM
Kang, SB
Choi, GH
Chung, UI
Moon, JT
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4B): : 1874 - 1876
[28] Investigation of the contact resistance between Ti/TiN and Ru in metal-1/plate contacts of ruthenium insulator silicon capacitor
Yun, Ju Young
Kim, Byung Hee
Seo, Jung Hun
Lee, Jong Myeong
Kang, Sang Bom
Choi, Gil Heyun
Chung, U In
Moon, Joo Tae
Yun, J.Y. (biomed2@hanmir.com), 1874, Japan Society of Applied Physics (42):
[29] Theoretical Investigation of Design Methodology, Optimized Molecular Geometries, and Electronic Properties of Benzene-Based Single Molecular Switch with Metal Nanoelectrodes
Tharammal, Rafsa Koyadeen
Kumar, Anand
Rajak, A. R. Abdul
Gaidhane, Vilas Haridas
JOURNAL OF NANOMATERIALS, 2020, 2020
[30] THERMAL STABILITIES, ELECTRONIC-PROPERTIES AND STRUCTURES OF METFORMIN-METAL COMPLEXES - MOLECULAR-ORBITAL INVESTIGATION
DONIA, AM
AWAD, MK
JOURNAL OF THERMAL ANALYSIS, 1995, 44 (06): : 1493 - 1498

← 1 2 3 4 5 →