Impact of remote oxygen scavenging on the interfacial characteristics of atomic layer deposited LaAlO3

被引：4

作者：

Wang, Yongte ^{[1
]}

Liu, Hongxia ^{[1
]}

Wang, Xing ^{[1
]}

Zhao, Lu ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Shaanxi, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 90卷

基金：

中国国家自然科学基金;

关键词：

Remote IL scavenging; Atomic layer deposition; LaAlO3; Interfacial characteristics; RELIABILITY; PERFORMANCE; DENSITY; DEVICE; FILMS; STACK;

D O I：

10.1016/j.mssp.2018.10.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the influence of a remote interfacial layer (IL) scavenging method on the interfacial characteristics of LaAlO3 grown by atomic layer deposition (ALD) on Si substrates has been studied. After the fabrication of Pt/LaAlO3/Si and Pt/Ti/TiN/LaAlO3/Si metal-insulator-semiconductor (MIS) capacitors, the microstructures and electrical properties of these MIS capacitors have been comparatively investigated. High resolution transmission electron microscopy (HRTEM) analysis shows that the thickness of IL between LaAlO3 films and Si substrates is reduced by remote IL scavenging technique, contributing to lower equivalent oxide thickness (EOT) and to higher dielectric constant values. However, larger amount of oxygen vacancies and dangling bonds are induced in the MIS structure with IL scavenging reaction, resulting in a slight degradation of the gate leakage current-voltage and the breakdown characteristics.

引用

页码：50 / 53

页数：4

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