Intrinsic photoconductivity of 6H-SiC and the free-exciton binding energy

被引：0

作者：

Ivanov, IG ^{[1
]}

Egilsson, T ^{[1
]}

Zhang, J ^{[1
]}

Ellison, A ^{[1
]}

Janzén, E ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

electronic bandgap; exciton recombination; excitonic bandgap; extrinsic photocurrent; intrinsic photocurrent;

D O I：

10.4028/www.scientific.net/MSF.353-356.405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper presents a study of the low-temperature photoconductivity of 6H-SiC. The photocurrent at the absorption edge is assigned to Auger recombination of excitons captured to impurities. This is shown to saturate and decrease with increasing the photon energy, so the further increase in the photocurrent, observed in the purest sample, can be attributed to free excitons created in non-bound states in the exciton continuum. Thus, the exciton binding energy can be estimated, E(bx) approximate to 60 +/- 5 meV in 6H-SiC.

引用

页码：405 / 408

页数：4

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