Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor

被引：15
|
作者：
Meng, Xiankuan [1 ]
Deng, Hongmei [2 ]
Zhang, Qiao [1 ]
Sun, Lin [1 ]
Yang, Pingxiong [1 ]
Chu, Junhao [1 ]
机构：
[1] East China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
[2] Shanghai Univ, Lab Microstruct, 99 Shangda Rd, Shanghai 200444, Peoples R China
来源：
MATERIALS LETTERS | 2017年 / 186卷
基金：
中国国家自然科学基金;
关键词：
Cu2FeSnS4; Sputtering; Thin films; Sulfurization; ELECTRICAL-PROPERTIES;
D O I：
10.1016/j.matlet.2016.10.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cu2FeSnS4 (CFTS) thin films have been prepared on glass substrates by a process of sputtering metallic precursor with post-sulfurization. By means of various holding times, the growth mechanism of CFTS has been determined by X-ray diffraction and Raman patterns. Three steps have been involved, the binary-phases CuSx, FeSx and SnSx are synthesized in the preliminary stage, and afterwards, CuSx reacts with FeSx to generate ternary-compound CuFeS2. At last, the target product CFTS is obtained with the increasing holding time of sulfurization. All the thin films have smooth and closely packed surface, and longer holding time is in favor of the grain growth. The thickness of these thin films is around 1 mu m.
引用
收藏
页码：138 / 141
页数：4
相关论文
共 50 条
  • [21] Low cost oxide-based deposition of Cu2FeSnS4 thin films for photovoltaic absorbers
    Chen, Guilin
    Li, Jianmin
    Chen, Shuiyuan
    Huang, Zhigao
    Wu, Miaoju
    Zhao, Jifu
    Wang, Weihuang
    Lin, Haiqin
    Zhu, Changfei
    MATERIALS CHEMISTRY AND PHYSICS, 2017, 188 : 95 - 99
  • [22] Effect of sprayed volume on physical properties of Cu2FeSnS4 thin films and an efficient p-type Cu2FeSnS4/n-type F-doped SnO2 heterojunction
    Nefzi, Chayma
    Souli, Mehdi
    Jeyadevan, Balachandran
    Kamoun-Turki, Najoua
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2020, 144
  • [23] The crystal structure of stannite, CU2FeSnS4
    Brockway, LO
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1934, 89 (05): : 434 - 441
  • [24] Fabrication and photoelectric properties of Cu2FeSnS4(CFTS) and Cu2FeSn(S,Se)4(CFTSSe) thin films
    Wang, Shuo
    Ma, Ruixin
    Wang, Chengyan
    Li, Shina
    Wang, Hua
    APPLIED SURFACE SCIENCE, 2017, 422 : 39 - 45
  • [25] STUDY OF THE NATURE OF MELTING OF STANNITE CU2FESNS4
    NENASHEVA, SN
    KALININA, TA
    INORGANIC MATERIALS, 1986, 22 (01) : 17 - 20
  • [26] Crystal structure of the cubic modification of Cu2FeSnS4
    Evstigneeva, TL
    Kabalov, YK
    CRYSTALLOGRAPHY REPORTS, 2001, 46 (03) : 368 - 372
  • [27] Synthesis and characterizations of quaternary Cu2FeSnS4 nanocrystals
    Yan, Chang
    Huang, Chun
    Yang, Jia
    Liu, Fangyang
    Liu, Jin
    Lai, Yanqing
    Li, Jie
    Liu, Yexiang
    CHEMICAL COMMUNICATIONS, 2012, 48 (20) : 2603 - 2605
  • [28] Deposition of CuFeS2 and Cu2FeSnS4 thin films and nanocrystals using diisobutyldithiophosphinato-metal precursors
    Nawaz, Sajid
    Thebo, Khalid Hussain
    Malik, Mohammad Azad
    Malik, Abdul Qadeer
    PROCEEDINGS OF 2020 17TH INTERNATIONAL BHURBAN CONFERENCE ON APPLIED SCIENCES AND TECHNOLOGY (IBCAST), 2020, : 44 - 50
  • [29] Preparation and characterization of Cu2FeSnS4 thin films for solar cells via a co-electrodeposition method
    Zhou, Jicheng
    Yu, Shiqi
    Guo, Xiaowei
    Wu, Liang
    Li, Hongjiang
    CURRENT APPLIED PHYSICS, 2019, 19 (02) : 67 - 71
  • [30] A comparative study of sol-gel and electrodeposition methods used in the synthesis of Cu2FeSnS4 thin films
    Drissi, S.
    El Kissani, A.
    Abali, A.
    Elhaj, D.
    Elmassi, S.
    Badr, H.
    Dahabi, H.
    Tair, M.
    Nkhaili, L.
    El Assali, K.
    Outzourhit, A.
    OPTICAL MATERIALS, 2025, 163
12345